onsemi FQP55N10
$ 1.07
EOL
Cronologia dell'inventario
Tendenza a 3 mesi: -12.03%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Parti correlate
InfineonIRFB59N10DPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V
NXP SemiconductorsBUK7528-100A,127
Trans MOSFET N-CH 100V 47A Automotive 3-Pin(3+Tab) TO-220AB Rail
Descrizioni
Descrizioni di onsemi FQP55N10 fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 100 V, 55 A, 26 mΩ, TO-220
155W(Tc) 25V 4V@ 250¦ÌA 98nC@ 10 V 1N 100V 26m¦¸@ 27.5A,10V 55A 2.73nF@25V TO-220-3 9.4mm
Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 100 V 0.026 O Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -12.03%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)55 A
Current Rating55 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time140 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.73 nF
Max Operating Temperature175 °C
Max Power Dissipation155 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation155 W
Rds On Max26 mΩ
Resistance26 mΩ
Rise Time250 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQP55N10.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità