onsemi FQP4N80
$ 0.913
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.46%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-10
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FQP4N80 fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, TO-220
Transistor,mosfet,n-Channel,800V V(Br)Dss,3.9A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP4N80
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 13
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.46%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)3.9 A
Current Rating3.9 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance880 pF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation130 W
Rds On Max3.6 Ω
Rise Time45 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)800 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità