Descrizioni di Vishay IRFBE30PBF fornite dai suoi distributori.
IRFBE30PBF N-CHANNEL MOSFET TRANSISTOR, 4.1 A, 800 V, 3-PIN TO-220AB
Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220AB
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 800V, 4.1A To-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFBE30PBF.
MOSFET, N, 800V, 4.1A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:4.1A; Resistance, Rds On:3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:16A; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2°C/W; Transistors, No. of:1; Voltage, Vds Max:800V