onsemi FQI13N50CTU
$ 1.065
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-16
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Parti correlate
STMicroelectronicsSTFI13NK60Z
N-channel 600 V, 0.48 Ohm, 13 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PAKFP package
STMicroelectronicsSTI13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAK package
STMicroelectronicsSTFI13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package
Descrizioni
Descrizioni di onsemi FQI13N50CTU fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 500 V, 13.5 A, 480 mΩ, I2PAK
Single N-Channel 500 V 0.48 Ohm 56 nC 195 W DMOS Through Hole Mosfet - I2PAK
Transistor,mosfet,n-Channel,500V V(Br)Dss,13A I(D),to-262Aa Rohs Compliant: Yes |Onsemi FQI13N50CTU
Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
195W(Tc) 30V 4V@ 250µA 56nC@ 10 V 1individualNChannel 500V 480mΩ@ 6.5A,10V 13A 2.055nF@25V I2PAK，TO-262 Through hole mounting 10.29mm*4.83mm*7.88mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.055 nF
Max Operating Temperature150 °C
Max Power Dissipation195 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation195 W
Rds On Max480 mΩ
Rise Time100 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)500 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità