onsemi FQD9N25TM-F080
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FQD9N25TM-F080 | 0 | 2500 | Tape & Reel | 14h | |||||||
| Worldway Electronics | FQD9N25TM-F080 | 25.705 | 7 | Tape & Reel | 1d | |||||||
| Esaler Electronic | FQD9N25TM-F080 | 2500 | 2d | |||||||||
| Aztech | FQD9N25TM_F080 | 18.277 | 1d | |||||||||
| Vigor Components | FQD9N25TM-F080 | 10 | 5d |
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-14
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Parti correlate
InfineonIRFR9N20DTRLPBF
Single N-Channel 200 V 0.38 Ohm 18 nC HEXFET® Power Mosfet - TO-252AA
InfineonIRFR9N20DPBF
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Descrizioni
Descrizioni di onsemi FQD9N25TM-F080 fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 250 V, 7.4 A, 420 mΩ, DPAK
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
Mosfet, N-Ch, 250V, 7.4A, To-252; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:7.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQD9N25TM-F080
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)7.4 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance420 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance700 pF
Max Operating Temperature150 °C
Max Power Dissipation55 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max420 mΩ
Rise Time105 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time13 ns
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità