onsemi FQD4N25TM-WS
$ 0.331
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD4N25TM-WS.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-14
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Descrizioni
Descrizioni di onsemi FQD4N25TM-WS fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 250 V, 3 A, 1.75 Ω, DPAK
Trans MOSFET N-CH 250V 3A 3-Pin(2+Tab) TO-252 T/R
Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 3
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -14.29%
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.75 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance200 pF
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.75 Ω
Resistance1.75 Ω
Rise Time45 ns
Turn-Off Delay Time6.4 ns
Turn-On Delay Time6.8 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD4N25TM-WS.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità