onsemi FQD6N25TM
EOL
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQD6N25TM | 89.500 | 1087 | 3d | ||||||||
| Flip Electronics | FQD6N25TM | 89.500 | 3d | |||||||||
| Farnell | FQD6N25TM | 0 | 5 | Cut Tape | 11h | |||||||
| Microchip USA | FQD6N25TM | 121 | 3500 | Tray | 4d | |||||||
| Win Source | WS-FQD6N25TM | 370 | 185 | 1h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Modelli CAD
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|---|---|---|---|
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-14
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
Descrizioni
Descrizioni di onsemi FQD6N25TM fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 250 V, 4.4 A, 1 Ω, DPAK
Transistor,mosfet,n-Channel,250V V(Br)Dss,4.4A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FQD6N25TM
Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)4.4 A
Current Rating4.4 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance300 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1 Ω
Rise Time65 ns
Turn-Off Delay Time7.5 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)250 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità