onsemi FDD6N20TM
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-06-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
STMicroelectronicsSTD5N20LT4
MOSFET Transistor, N Channel, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V RoHS Compliant: Yes
Descrizioni
Descrizioni di onsemi FDD6N20TM fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, 200V, 4.5A, 800mΩ, DPAK
N-Channel 200 V 0.8 Ohm Surface Mount UniFET Mosfet DPAK
MOSFET, N CH, 200V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time12.8 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance230 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40 W
Rds On Max800 mΩ
Resistance800 mΩ
Rise Time5.6 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time15 ns
Turn-On Delay Time8.3 ns
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità