onsemi FQD3N50CTF
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | FQD3N50CTF | 354 | 3500 | Tray | 20h | |||||||
| Component Stockers USA | FQD3N50CTF | 789 | 18h | |||||||||
| Win Source | WS-FQD3N50CTF | 32.000 | 105 | 5h | ||||||||
| Worldway Electronics | FQD3N50CTF | 16.293 | 7 | Tape & Reel | 4h | |||||||
| Fly-Wing Technology | FQD3N50CTF | 18.625 | 1d |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD3N50CTF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-05-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
VishaySIHD3N50D-E3
MOSFET N-CH 500V 3A DPAK / N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
InfineonSPD03N50C3ATMA1
Trans MOSFET N-CH 500V 3.2A 3-Pin(2+Tab) DPAK T/R / Cool MOS Power Transistor
InfineonIPD50R2K0CEAUMA1
Multilayer Ceramic Capacitor, Grm Series, 0.01 F, 5%, X7r, 25 V, 0402 [1005 Metric]
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance365 pF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max2.5 Ω
Rise Time25 ns
Turn-Off Delay Time35 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD3N50CTF.