onsemi FQD19N10LTM
$ 0.514
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQD19N10LTM | 127.500 | 2500 | 2d | ||||||||
| Newark | FQD19N10LTM | 536 | 1 | Cut Tape | ||||||||
| Verical | FQD19N10LTM | 1128 | 644 | |||||||||
| Rochester Electronics | FQD19N10LTM | 7838 | 21h | |||||||||
| DigiKey | FQD19N10LTMCT-ND | 10.321 | 1 | Cut Tape |
Cronologia dell'inventario
Tendenza a 3 mesi: -20.60%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
VishayIRFR110PBF
Transistor: N-MOSFET; unipolar; 100V; 4.3A; 0.54ohm; 25W; -55+150 deg.C; SMD; TO252(DPAK)
Descrizioni
Descrizioni di onsemi FQD19N10LTM fornite dai suoi distributori.
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK
Power MOSFET, N Channel, 100 V, 15.6 A, 0.074 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.074ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -20.60%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)15.6 A
Current Rating15.6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time140 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max100 mΩ
Resistance100 mΩ
Rise Time410 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)100 V
Dimensions
Height2.517 mm
Length6.6 mm
Width6.1 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità