onsemi FQD17N08LTM
$ 0.338
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -22.22%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-14
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
Parti correlate
Diodes Inc.DMP6180SK3-13
P-Channel 60 V 110 mO Surface Mount Enhancement Mode Mosfet -TO-252-3 (DPAK)
Descrizioni
Descrizioni di onsemi FQD17N08LTM fornite dai suoi distributori.
N-Channel Power MOSFET, Logic Level, QFET®, 80 V, 12.9 A, 100 mΩ, DPAK
Trans MOSFET N-CH 80V 12.9A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 1
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IC,FQD17N08LTM,FAIRCHILD SEMI< NV
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -22.22%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)12.9 A
Current Rating12.9 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max100 mΩ
Rise Time290 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)80 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità