onsemi FQD12N20TM

N-Channel Power MOSFET, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
$ 0.392
EOL
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DistributorSKUMinPkg
Rochester ElectronicsFQD12N20TM370
5h
RS (Formerly Allied Electronics)FQD12N20TM010Bulk
22h
Win SourceWS-FQD12N20TM500040
6h
Worldway ElectronicsFQD12N20TM17.3247Tape & Reel
5h
AztechFQD12N20TM545
2h

Schede tecniche e documenti

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Datasheet9 pagine12 anni fa
Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi FQD12N20TM fornite dai suoi distributori.

N-Channel Power MOSFET, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
onsemi
TRANSISTOR, N-CHANNEL, QFET MOSFET, 200V, 9A, 280 MOHM AT VGS 10V, DPAK
RS (Formerly Allied Electronics)
N-Channel 200 V 0.28 Ohm Surface Mount QFET Mosfet - DPAK
Future Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N-CH, 200V, 9A, TO-252-3; Transi; MOSFET, N-CH, 200V, 9A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3Pins
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
Fairchild Semiconductor

Immagini

TME
RS
Newark
Conrad
Future Electronics
Rochester Electronics

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  • FQD12N20TM.