onsemi FQD12N20LTM
$ 0.432
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Prezzo e stock
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQD12N20LTM | 97.500 | 2500 | 4h | ||||||||
| Newark | FQD12N20LTM | 2275 | 1 | Cut Tape | ||||||||
| Verical | FQD12N20LTM | 7500 | 100 | |||||||||
| Arrow Electronics | FQD12N20LTM | 5000 | 2500 | |||||||||
| Master Electronics | FQD12N20LTM | 7500 | 100 |
Cronologia dell'inventario
Tendenza a 3 mesi: +36.35%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FQD12N20LTM fornite dai suoi distributori.
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +36.35%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance320 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.08 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation55 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max280 mΩ
Resistance280 mΩ
Rise Time190 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time60 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)200 V
Dimensions
Height2.39 mm
Length6.6 mm
Width6.1 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità