onsemi FQB8P10TM
EOL
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQB8P10TM.
Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
InfineonIRL520NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;D2Pak;PD 48W;VGS +/-16V;-55d
InfineonIRL520NSTRLPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
onsemiFQB33N10TM
Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel
Descrizioni
Descrizioni di onsemi FQB8P10TM fornite dai suoi distributori.
Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, D2PAK
P-Channel 100 V 0.53 Ohm Surface Mount Mosfet - D2PAK-3
Trans MOSFET P-CH 100V 8A 3-Pin(2+Tab) D2PAK T/R
MOSFET, P-CH, 100V, 8A, 175DEG C, 65W; Available until stocks are exhausted
Power Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)8 A
Current Rating-8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance530 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance470 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.75 W
Rds On Max530 mΩ
Resistance530 mΩ
Rise Time110 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)-100 V
Dimensions
Height5.08 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQB8P10TM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità