onsemi FQA90N15
$ 3.015
EOL
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Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -21.44%
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1 parte disponibile
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Price @ 1000
$ 3.015
$ 2.95
Stock
273,538
132,859
Authorized Distributors
4
5
Mount
Through Hole
Through Hole
Case/Package
-
-
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
90 A
90 A
Threshold Voltage
4 V
-
Rds On Max
18 mΩ
18 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
375 W
6 W
Input Capacitance
8.7 nF
8.7 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-05-26
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Parti correlate
Descrizioni
Descrizioni di onsemi FQA90N15 fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 150V, 90A, 18mΩ, TO-3P
150 V, 90 A, 18 MILLI OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 90A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:150V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:90A; Resistance, Rds On:0.018ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -21.44%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)90 A
Current Rating90 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time410 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance8.7 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation375 W
Rds On Max18 mΩ
Rise Time760 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time470 ns
Turn-On Delay Time105 ns
Voltage Rating (DC)150 V
Dimensions
Height18.9 mm
Length15.8 mm
Width5 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità