onsemi FQA19N60

N-Channel Power MOSFET, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P
Obsolete
Pagina del produttoreScheda dati

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DistributorSKUMinPkg
Microchip USAFQA19N60403150Bulk
3h
Win SourceWS-FQA19N6059175
9h
Worldway ElectronicsFQA19N6065487Tube
8h
Esaler ElectronicFQA19N60450
5d
AztechFQA19N60395
4h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FQA19N60.

Upverter

Technical Drawing1 pagina6 anni fa

Farnell

IHS

onsemi

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-26
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

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Descrizioni

Descrizioni di onsemi FQA19N60 fornite dai suoi distributori.

N-Channel Power MOSFET, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P
onsemi
Transistor FQA19N60 N-Channel QFET MOSFET 600V 18.5A TO-3PN
Jameco
N Channel 600 V 380 mO 300 W QFET Mosfet Flange Mount - TO-3PN
Future Electronics
Trans MOSFET N-CH 600V 18.5A 3-Pin(3+Tab) TO-3P(N) Rail
Avnet
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:74A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Immagini

Augswan
RS
iiiC
Farnell
Rochester Electronics
UTSource
Future Electronics

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  • ON Semiconductor Corporation
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  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

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