onsemi FQA170N06
$ 3.791
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-13
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
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MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.5Milliohms;ID 170A;TO-220AB;PD 300W;-55de
InfineonIRFB3207ZPBF
MOSFET N-CH 75V 120A TO-220AB / Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
STMicroelectronicsSTP160N75F3
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
Descrizioni
Descrizioni di onsemi FQA170N06 fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
Trans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3P(N) Rail
N-Channel 60 V 5.6 mOhm Through Hole Mosfet - TO-3PN
FAIRCHILD SEMICONDUCTORFQA170N06N CHANNEL MOSFET, 60V, 170A, TO-3PN
Power Field-Effect Transistor, 170A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FQA170N06 - POWER MOSFET, N-CHAN
60V 170A 4.5´Î@10V85A 375W 4V@250uA 620pF@25V N Channel 7.2nF@25V 220nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)170 A
Current Rating170 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5.6 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time430 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance9.35 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation375 W
Rds On Max5.6 mΩ
Resistance5.6 MΩ
Rise Time700 ns
Threshold Voltage4 V
Turn-Off Delay Time260 ns
Turn-On Delay Time85 ns
Voltage Rating (DC)60 V
Dimensions
Height18.9 mm
Length15.8 mm
Width5 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità