onsemi FOD817B3SD
$ 0.137
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FOD817B3SD | 72.000 | 1K | Tape & Reel | ||||||||
| Avnet | 56AC8351 | 864 | 1 | 1d | ||||||||
| Newark | FOD817B3SD | 864 | 1 | Cut Tape | ||||||||
| Arrow Electronics | FOD817B3SD | 7506 | 1 | |||||||||
| Verical | FOD817B3SD | 804 | 130 |
Cronologia dell'inventario
Tendenza a 3 mesi: -12.04%
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Questo componente
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Price @ 1000
$ 0.137
$ 0.117
Stock
2,940,192
2,388,950
Authorized Distributors
6
6
Case/Package
SMD/SMT
SMD/SMT
Number of Pins
4
4
Number of Channels
1
1
Isolation Voltage
5000 Vrms
5000 Vrms
Current Transfer Ratio
130 %
130 %
Rise Time
18 µs
18 µs
Fall Time
18 µs
18 µs
Output Voltage
70 V
70 V
Output Current
-
-
Forward Voltage
1.4 V
1.4 V
Forward Current
50 mA
50 mA
Supply Chain
Country of OriginThailand
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2004-04-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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California Eastern LaboratoriesPS2501AL-1-F3-A
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Descrizioni
Descrizioni di onsemi FOD817B3SD fornite dai suoi distributori.
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Black T/R
Avnet Japan
FOD817 Series Single Channel 70 V 5000 Vrms Phototransistor Optocoupler -DIP-4
Transistor Output Optocoupler, 1-Element, 5000V Isolation
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
OPTOCOUPLER, TRANS. O/P, REEL; No. of Channels:1; Isolation Voltage:5kV; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:70V; Opto Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2013); Approval Bodies:cUL, UL, VDE; Breakover Voltage Min:70V; Current Transfer Ratio Max:260%; Current Transfer Ratio Min:130%; Fall Time tf:18000ns; Operating Temperature Max:110°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +110°C; Output Voltage Max:6V; Rise Time:18000ns
Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 50 / Power Dissipation (Pd) mW = 150 / Reverse Voltage (Vr) V = 6 / Package Type = DIP-4 / Collector-Emitter Saturation Voltage Max. mV = 200 / Emitter−Collector Voltage (VECO) Max. V = 6 / Forward Voltage (Vf) Max. V = 1.4 / Output Type = Phototransistor / Isolation Voltage kV = 5 / Forward Current (If) Max. mA = 50 / Current Transfer Ratio (CTR) Min. % = 130 / Operating Temperature Max. °C = 110 / Operating Temperature Min. °C = -55 / Current Transfer Ratio (CTR) Max. % = 260 / Channels = 1
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -12.04%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSMD/SMT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Weight508.987338 mg
Technical
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)70 V
Current Transfer Ratio130 %
Dark Current100 nA
Fall Time18 µs
Forward Current50 mA
Forward Voltage1.4 V
Input Current20 mA
Isolation Voltage5000 Vrms
Max Collector Current50 mA
Max Input Current50 mA
Max Junction Temperature (Tj)125 °C
Max Operating Temperature110 °C
Max Output Voltage70 V
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output Current per Channel50 mA
Output Voltage70 V
Power Dissipation200 mW
Reverse Breakdown Voltage6 V
Reverse Voltage6 V
Rise Time18 µs
Schedule B8541408000
Dimensions
Height4.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità