onsemi FGA5065ADF
$ 2.261
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FGA5065ADF | 10.611 | 3h | |||||||||
| Verical | FGA5065ADF | 10.611 | 134 | |||||||||
| Flip Electronics | FGA5065ADF | 794 | >1wk | |||||||||
| Avnet | FGA5065ADF | 0 | 353 | 5h | ||||||||
| Mouser | 512-FGA5065ADF | 59 | 1 | Tube |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo onsemi FGA5065ADF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-08-21
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Parti correlate
onsemiFGH40T65SHD-F155
IGBT, 650 V, 40 A Field Stop Trench 650 V, 40 A Field Stop Trench IGBT
InfineonIGW40N65F5FKSA1
IGBT 650V 74A TO247-3 / IGBT 650 V 74 A 255 W Through Hole PG-TO247-3
InfineonIKP40N65H5XKSA1
IKP40N65H5: 650 V 74 A High Speed 5 IGBT TRENCHSTOPTM 5 Technology-PG-TO220-3
Descrizioni
Descrizioni di onsemi FGA5065ADF fornite dai suoi distributori.
INSULATED GATE BIPOLAR TRANSISTO / IGBT Trench Field Stop 650 V 100 A 268 W Through Hole TO-3PN
Trans IGBT Chip N-CH 650V 100A 268000mW 3-Pin(3+Tab) TO-3PN Rail
IGBT, 650 V, 50 A Field Stop Trench
FS3 650V SHD prolferation - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
IGBT TRENCH FS 650V 100A TO-3PN
Insulated Gate Bipolar Transistor
268W 1.7V 650V 100A TO-3PN 18.9mm
FAST & ULTRAFAST RECOVERY RECTIFIERS;
This ADF IGBT series adopted field stop trench 3rd generation IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology; Single Boost, Multi Channel Interleaved etc with over 20KHz switching performance. TO3P package provide super low thermal resistance for much wider SOA for system stability.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountThrough Hole
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current100 A
Max Operating Temperature175 °C
Max Power Dissipation268 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time31.8 ns
Schedule B8541290080
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità