onsemi FGA25N120ANTDTU
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FGA25N120ANTDTU.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-07-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-12-30
LTD Date2023-06-30
Parti correlate
InfineonIRG7PH35UD1PBF
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
onsemiHGTG11N120CND
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
International RectifierIRG7PH35UD1-EP
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
Descrizioni
Descrizioni di onsemi FGA25N120ANTDTU fornite dai suoi distributori.
Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
Transistor IGBT Chip N Channel 1.2k Volt 50 Amp 3-Pin 3+ Tab TO-3PN Rail
FGA25N120ANTD Series 1200 V 50 A Flange Mont NPT Trench IGBT - TO-3PN
In a Pack of 2, ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P
IGBT, NPT, TO-3PN; DC Collector Current:50A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:312mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Package / Case:TO-3PN; Power Dissipation Max:312W; Power Dissipation Pd:312mW; Pulsed Current Icm:90A; Rise Time:60ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.40101 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.65 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current50 A
Current Rating50 A
Element ConfigurationSingle
Max Collector Current25 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation312 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation312 W
Reverse Recovery Time350 ns
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time190 ns
Turn-On Delay Time50 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height23.8 mm
Length15.8 mm
Width5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FGA25N120ANTDTU.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità