onsemi FDZ371PZ
$ 0.312
Obsolete
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SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo onsemi FDZ371PZ, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Ultra Librarian | SimboloImpronta | Scarica |
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-07-22
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Parti correlate
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N-channel 20 V 0.055 Ohm Surface Mount Enhancement Mode MOSFET - SOT-23-3
VishaySIA923EDJ-T1-GE3
MOSFET, DUAL P-CH, -20V, POWERPAK SC70-6; Transistor Polarity:Dual P Channel; Co
Descrizioni
Descrizioni di onsemi FDZ371PZ fornite dai suoi distributori.
P-Channel PowerTrench® Thin WL-CSP MOSFET, 1.5 V Specified, -20V, -3.7A, 75mΩ
Single P-Channel 20 V 150 mOhm 17 nC 1.7 W PowerTrench SMT Mosfet - WLCSP-4
MOSFET Transistor; Transistor Polarity:P; MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Contact PlatingCopper, Silver, Tin
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight68.4 mg
Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance75 mΩ
Element ConfigurationSingle
Fall Time88 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.7 W
Rds On Max75 mΩ
Rise Time9.1 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time124 ns
Turn-On Delay Time5.9 ns
Dimensions
Height400 µm
Length1 mm
Width1 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità