onsemi FDT1600N10ALZ
$ 0.344
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Cronologia dell'inventario
Tendenza a 3 mesi: +6.03%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-08-03
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55
Descrizioni
Descrizioni di onsemi FDT1600N10ALZ fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET 100V, 5.6A, 160mΩ
100V 160mOhm SOT223 GREEN EMC - MOLDED PACKAGE, SOT-223, 4 LEAD
MOSFET, N-CH, 100V, 5.6A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +6.03%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight250.2 mg
Technical
Continuous Drain Current (ID)5.6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time14.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance225 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation10.42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation10.42 W
Rds On Max160 mΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time13.5 ns
Turn-On Delay Time7.4 ns
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità