onsemi FDS9953A
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS9953A.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-18
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
InfineonIRF9952TRPBF
MOSFET N/P-CH 30V 8-SOIC / Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC N T/R
InfineonIRF7306PBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7306TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
onsemiFDFS2P753Z
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ
Descrizioni
Descrizioni di onsemi FDS9953A fornite dai suoi distributori.
Transistor MOSFET Array Dual P-CH 30V 2.9A 8-Pin SOIC T/R
Avnet Japan
Dual P-Channel PowerTrench® MOSFET, 30V, -2.9A, 130mΩ
Dual 30 V P-Channel 130 mOhm Surface Mount PowerTrench Mosfet- SOIC-8
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.9mA; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)2.9 A
Current Rating-2.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationDual
Fall Time2 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance185 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max130 mΩ
Resistance130 MΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS9953A.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità