onsemi FDFS2P753Z
$ 0.356
Obsolete
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-10
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2019-07-31
LTD Date2020-01-31
Parti correlate
InfineonIRF7306PBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7306TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7326D2TRPBF
MOSFET P-CH 30V 3.6A 8SO P-Channel 30 V 3.6A (Ta) 2W (Ta) Surface Mount 8-SO
Descrizioni
Descrizioni di onsemi FDFS2P753Z fornite dai suoi distributori.
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ
P-Channel 30 V 115 mOhm Integrated PowerTrench Mosfet SOIC-8
Trans MOSFET P-CH 30V 3A 8-Pin SOIC N T/R
1.6W(Ta) 25V 3V@ 250µA 9.3nC@ 10 V 1individualPChannel 30V 115mΩ@ 3A,10V 3A 455pF@10V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm
MOSFET, P, SCHOTTKY, SMD, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:3A; Resistance, Rds On:0.115ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-2.1V; Case Style:SOIC;;RoHS Compliant: Yes
The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)3 A
Current Rating-3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance162 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time31 ns
Forward Current2 mA
Gate to Source Voltage (Vgs)25 V
Input Capacitance455 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max115 mΩ
Resistance115 MΩ
Rise Time31 ns
Schedule B8541290080
Threshold Voltage-2.1 V
Turn-Off Delay Time18 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length4.9 mm
Width3.9 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDFS2P753Z.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità