onsemi FDS8928A
EOL
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-07-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
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Dual N/P-Channel 20 V 0.05/0.09 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
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Dual N/P-Channel 20 V 0.07/0.14 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
Descrizioni
Descrizioni di onsemi FDS8928A fornite dai suoi distributori.
Dual N & P-Channel 30 V 30 mOhm Power Field Effect Transistor-SOIC-8
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SMD, 8-SOIC; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:30V; Current, Id Cont:5.5A; On State Resistance:0.03ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.67V; Case Style:SOIC; Termination Type:SMD
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Resistance30 mΩ
Fall Time90 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance900 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs670 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max30 mΩ
Resistance30 MΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage670 mV
Turn-Off Delay Time260 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS8928A.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità