Infineon IRF7307TRPBF

Dual N/P-Channel 20 V 0.07/0.14 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
$ 0.72
Obsolete
Pagina del produttoreScheda dati

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Schede tecniche e documenti

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Datasheet10 pagine21 anni fa

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.72
$ 0.8
Stock
664,844
156,902
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
4.3 A
5.2 A
Threshold Voltage
700 mV
-
Rds On Max
50 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
2 W
2 W
Input Capacitance
660 pF
610 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Transistor: 2xN-MOSFET; unipolar; 20V; 5.2A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
InfineonIRF7307PBF
Dual N/P-Channel 20 V 0.05/0.09 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
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N-channel 20 V, 0.030 Ohm typ., 5 A STripFET(TM) II Power MOSFET in a SO-8 package
Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual

Descrizioni

Descrizioni di Infineon IRF7307TRPBF fornite dai suoi distributori.

Dual N/P-Channel 20 V 0.07/0.14 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Trans MOSFET N/P-CH 20V 5.7A/4.7A 8-Pin SOIC T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL N/P CHANNEL MOSFET, 20V, SOIC; Tran; DUAL N/P CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:5.2A; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, N Channel:20V
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.2A; On Resistance Rds(On):0.05Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 90 / Gate-Source Voltage V = 12 / Fall Time ns = 51 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF7307TRPBF.
  • SP001574744