onsemi FDS8672S
$ 0.553
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.14%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-01-02
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Parti correlate
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
Descrizioni
Descrizioni di onsemi FDS8672S fornite dai suoi distributori.
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R / MOSFET N-CH 30V 18A 8-SOIC
2.5W(Ta) 20V 3V@1mA 41nC@ 10 V 1N 30V 4.8m¦¸@ 18A,10V 18A 2.67nF@15V SOIC-8 4.9mm*3.9mm*1.75mm
N-Channel 30 V 4.8 mO 2.5 W PowerTrench SyncFET Surface Mount- SOIC-8
MOSFET, N CH, 30V, 18A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.14%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.67 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Elements1
Power Dissipation1 W
Rds On Max4.8 mΩ
Resistance4.8 MΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage2.1 V
Turn-Off Delay Time26 ns
Turn-On Delay Time12 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità