onsemi FDS8813NZ

N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
$ 0.634
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Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-03-29
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)

Parti correlate

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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
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InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
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Descrizioni

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N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Future Electronics
N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
onsemi
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Fairchild Semiconductor
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
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