onsemi FDS8670
$ 0.851
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-10-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-06-01
LTD Date2011-12-01
Parti correlate
STMicroelectronicsSTS26N3LLH6
N-Channel 30 V 0.0044 Ohm SMT STripFET VI DeepGATE Mosfet SOIC-8
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
Descrizioni
Descrizioni di onsemi FDS8670 fornite dai suoi distributori.
Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
MOSFETs 30V N-CHANNEL POWERTRENCH MOSFET
Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:105A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
This device has been designed specifically to improvethe efficiency of DC-DC converters. Using newtechniques in MOSFET construction, the variouscomponents of gate charge and capacitance have beenoptimized to reduce switching losses. Low gateresistance and very low Miller charge enable excellentperformance with both adaptive and fixed dead timegate drive circuits. Very low Rds(on) has beenmaintained to provide an extremely versatile device.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.04 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.7 mΩ
Rise Time11 ns
TerminationSMD/SMT
Turn-Off Delay Time56 ns
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità