onsemi FDS6911
$ 0.109
Obsolete
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-04-04
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2022-03-31
LTD Date2023-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Descrizioni
Descrizioni di onsemi FDS6911 fornite dai suoi distributori.
Dual N-Channel PowerTrench® MOSFET, Logic Level, 20V, 7.5A, 13mΩ
Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R
N CHANNEL MOSFET, 20V, SOIC; Transistor; N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:7.5A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0106ohm; Rds(on) Test Voltage Vgs:10V
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)7.5 A
Current Rating7.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.13 nF
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements2
Power Dissipation1.6 W
Rds On Max13 mΩ
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)20 V
Dimensions
Height1.575 mm
Length4.9 mm
Width3.9 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità