onsemi FDS6900AS
$ 0.55
Obsolete
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-29
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Parti correlate
VishaySI4804CDY-T1-GE3
Dual N-Channel MOSFET 30V 8A 2W 2.4V@250µA 23nC@10V 22mΩ@7.5A,10V 865pF@15V SOIC-8 SMD 1.75mm H
Descrizioni
Descrizioni di onsemi FDS6900AS fornite dai suoi distributori.
Transistor MOSFET Array Dual N-CH 30V 8.2A/6.9A 8-Pin SOIC T/R
3V@ 250µA 15nC@ 10V 2individualNChannel 30V 27mΩ@ 6.9A,10V 600pF@15V SOIC-8 SMD mount
MOSFET, DUAL, N, SMD, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.9A; Resistance, Rds On:27mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:6.9A; Current, Id Cont N Channel 3:8.2A; Current, Idm Pulse N Channel 2:20A; Current, Idm Pulse N Channel 3:30A; No. of Pins:8; Power Dissipation:2W; Resistance, Rds on N Channel 1:0.027ohm; Resistance, Rds on N Channel 2:0.022ohm; Transistors, No. of:1; Voltage, Vds Max:30V
The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)8.2 A
Current Rating8.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance600 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements2
Power Dissipation2 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time4 ns
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time23 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Width3.99 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità