MOSFET, DUAL, N, SMD, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.9A; Resistance, Rds On:27mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:6.9A; Current, Id Cont N Channel 3:8.2A; Current, Idm Pulse N Channel 2:20A; Current, Idm Pulse N Channel 3:30A; No. of Pins:8; Power Dissipation:2W; Resistance, Rds on N Channel 1:0.027ohm; Resistance, Rds on N Channel 2:0.022ohm; Transistors, No. of:1; Voltage, Vds Max:30V

Farnell

The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Fairchild Semiconductor

Immagini

TME

element14 APAC

iiiC

Rochester Electronics

Conrad

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

FDS6900AS.

Cronologia dell'inventario

Tendenza a 3 mesi: +0.00%

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageSOIC

Contact PlatingTin

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight187 mg

Technical

Continuous Drain Current (ID)8.2 A

Current Rating8.2 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance22 mΩ

Drain to Source Voltage (Vdss)30 V

Dual Supply Voltage30 V

Element ConfigurationDual

Fall Time3 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance600 pF

Max Operating Temperature150 °C

Max Power Dissipation2 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Nominal Vgs1.9 V

Number of Elements2

Power Dissipation2 W

Rds On Max27 mΩ

Resistance27 MΩ

Rise Time4 ns

TerminationSMD/SMT

Threshold Voltage1.9 V

Turn-Off Delay Time23 ns

Voltage Rating (DC)30 V

Dimensions

Height1.5 mm

Length5 mm

Width3.99 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDS6900AS.

IHS

Datasheet11 pagine4 anni fa

Datasheet10 pagine21 anni fa

onsemi

Farnell

Fairchild Semiconductor

iiiC

Conformità

Classificazione ambientale

China RoHSCompliant

Lead FreeLead Free

REACH SVHCYes

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement3 pagine11 anni fa

Materials Sheet3 pagine11 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A