onsemi FDS6612A
$ 0.399
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -6.08%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Descrizioni
Descrizioni di onsemi FDS6612A fornite dai suoi distributori.
N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ
N-Channel 30 V 22 mOhm Logic Level PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 8.4A 8-Pin SOIC N T/R
MOSFET, N, SMD, 8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) ; Available until stocks are exhausted Alternatives available
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -6.08%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)8.4 A
Current Rating8.4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance560 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1 W
Rds On Max22 mΩ
Resistance22 MΩ
Rise Time5 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time22 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità