onsemi FDS6680

Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET | MOSFET N-CH 30V 11.5A 8-SOIC
$ 1.046
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Rochester ElectronicsFDS668057.204
19h
Verical
4
FDS66806832268
AvnetFDS668002500
21h
Farnell
3
FDS6680..01
19h
element14 APAC
2
FDS668001Cut Tape
8h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDS6680.

IHS

Datasheet5 pagine0 anni fa
Datasheet0 pagine0 anni fa

Fairchild Semiconductor

Future Electronics

Farnell

iiiC

Cronologia dell'inventario

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-04-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)

Parti correlate

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N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
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onsemiFDS6670A
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 13A, 8mΩ
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InfineonIRF7413ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
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InfineonIRF7413ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
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InfineonIRF8707GTRPBF
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
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Descrizioni

Descrizioni di onsemi FDS6680 fornite dai suoi distributori.

Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET | MOSFET N-CH 30V 11.5A 8-SOIC
Win Source
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC T/R
Verical
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:11.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS 6680; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:3V
element14 APAC
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:11.5A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination ;RoHS Compliant: Yes
Newark
These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Fairchild Semiconductor

Immagini

Farnell
Newark
iiiC
Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FDS6680.
  • FDS6680..