onsemi FDS5690
$ 0.456
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -0.91%
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Questo componente
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Price @ 1000
$ 0.456
$ 1.25
$ 1.25
Stock
629,600
443,807
443,807
Authorized Distributors
6
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
7 A
7 A
7 A
Threshold Voltage
-
-
-
Rds On Max
28 mΩ
26 mΩ
26 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
1.107 nF
1.74 nF
1.74 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-11-30
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-12-24
LTD Date2021-12-24
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
InfineonIRF7478TRPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7478PBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
InfineonAUIRF7478QTR
Single N-Channel 60 V 26 mOhm 21 nC Automotive HEXFET® Power Mosfet - SOIC-8
Descrizioni
Descrizioni di onsemi FDS5690 fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET, 60V, 7A, 28mΩ
N-Channel 60 V 28 mOhm PowerTrench Mosfet SOIC-8
MOSFET, N-CH, 60V, 7A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.022ohm; Rds(on; Available until stocks are exhausted Alternative available
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.91%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.107 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max28 mΩ
Resistance28 mΩ
Rise Time9 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità