onsemi FDS4685
$ 0.284
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Tendenza a 3 mesi: +44.42%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
InfineonIRF7416TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
InfineonIRF7469PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V
VishaySI4435DDY-T1-GE3
Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8
Descrizioni
Descrizioni di onsemi FDS4685 fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 40V, -8.2A, 27mΩ
MOSFET P-CH 40V 8.2A 8SOIC / Trans MOSFET P-CH 40V 8.2A 8-Pin SOIC T/R
P-Channel 40 V 27 mO 1.2 W PowerTrench Mosfet SOIC-8
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
MOSFET, P CH, 40V, 8.2A, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:1.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -8.2 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +44.42%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)8.2 A
Current Rating-8.2 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)-40 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.872 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.2 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage-1.6 V
Turn-Off Delay Time50 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-40 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità