onsemi FDS4465
$ 0.633
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Cronologia dell'inventario
Tendenza a 3 mesi: -10.61%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-11-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF7425TRPBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
InfineonIRF7425PBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
Descrizioni
Descrizioni di onsemi FDS4465 fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -13.5A, 8.5mΩ
In a Pack of 5, FDS4465 P-Channel MOSFET, 13.5 A, 20 V, 8-Pin SOIC ON Semiconductor
TRANS MOSFET P-CH 20V 13.5A 8SOIC - Tape and Reel
Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -13.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 13.5A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -600mV; Voltage Vgs Rds on Measurement: -4.5V
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -10.61%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)13.5 A
Current Rating-13.5 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time140 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance8.237 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.2 W
Rds On Max8.5 mΩ
Resistance8.5 MΩ
Rise Time24 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-600 mV
Turn-Off Delay Time300 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità