onsemi FDPF10N60NZ
$ 1.06
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDPF10N60NZ | 120 | 15h | |||||||||
| Flip Electronics | FDPF10N60NZ | 17.728 | 10h | |||||||||
| Avnet | FDPF10N60NZ | 0 | 2500 | 17h | ||||||||
| Farnell | FDPF10N60NZ | 0 | 1 | 15h | ||||||||
| Win Source | WS-FDPF10N60NZ | 3000 | 85 | 16h |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.14%
Modelli CAD
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDPF10N60NZ.
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-20
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Parti correlate
STMicroelectronicsSTP10NK60ZFP
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 35W; -55+150 deg.C; THT; TO220FP
STMicroelectronicsSTP9NK60ZFP
N-Channel 600 V 950 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
STMicroelectronicsSTF10NM60ND
N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
Descrizioni
Descrizioni di onsemi FDPF10N60NZ fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM II, 600 V, 10 A, 750 mΩ, TO-220F
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 38W; -55+150 deg.C; THT; TO220F
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO-220F
RAIL/UNIFET2 600V N-CHANNEL MOSFET, TO220F SINGLE GAUGE
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CHANNEL, 600V, 10A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.14%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.475 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation38 W
Rds On Max750 mΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time70 ns
Turn-On Delay Time25 ns
Dimensions
Height19.5 mm
Length10.36 mm
Width4.9 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDPF10N60NZ.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità