onsemi FCPF11N60F

N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220F

Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Rail

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation

MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; On State Resistance:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; SVHC:Cobalt dichloride; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:16.7mJ; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation Pd:36W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super-FET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.