onsemi FDP3682
$ 0.918
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Cronologia dell'inventario
Tendenza a 3 mesi: -18.92%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-06-12
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF540ZPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V
InfineonIRF540NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
NexperiaBUK7575-100A,127
N CH MOSFET, TRENCH AUTO, 100V, 75A, 3TO220AB; Transistor Polarity:N Channel; Co
Descrizioni
Descrizioni di onsemi FDP3682 fornite dai suoi distributori.
TO-220AB, SINGLE, N-CH, 100V, 36MOHM ULTRAFET TRENCH MOSFET
N-Channel 100 V 36 mOhm PowerTrench Mosfet - TO-220AB
N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 95 W
100 V, 32 A, 36 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:95W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:32A; Package / Case:TO-220AB; Power Dissipation Pd:95W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -18.92%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)6 A
Current Rating32 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.25 nF
Max Operating Temperature175 °C
Max Power Dissipation95 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation95 W
Rds On Max36 mΩ
Recovery Time55 ns
Resistance36 MΩ
Rise Time46 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità