Infineon IRF540NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-220AB; Pd 130W; -55DEG
$ 0.569
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF540NPBF.

IHS

Datasheet10 pagine22 anni fa
Datasheet9 pagine25 anni fa

Newark

RS (Formerly Allied Electronics)

DigiKey

Jameco

Cronologia dell'inventario

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-09-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Parti correlate

InfineonIRF540ZPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V
InfineonIRL540NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 36A;TO-220AB;PD 140W;VGS +/-16V
VishayIRF540PBF
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3
onsemiFQP33N10
Power MOSFET, N-Channel, QFET®, 100 V, 33 A, 52 mΩ, TO-220
onsemiFQP44N10
Power MOSFET, N-Channel, QFET®, 100 V, 43.5 A, 39 mΩ, TO-220
onsemiIRL540A
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 28A Tc 121W Tc 100V -55C~175C TJ

Descrizioni

Descrizioni di Infineon IRF540NPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET, N Channel, 100 V, 33 A, 44 Milliohms, TO-220AB, 3 Pins, Through Hole
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF
Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd
N CHANNEL, MOSFET, 100V, 33A, TO-220AB;; N CHANNEL, MOSFET, 100V, 33A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Res; Available until stocks are exhausted
N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF540NPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • 540N
  • 540NPBF
  • IRF 540 N PBF
  • IRF 540N
  • IRF 540NPBF
  • IRF-540N
  • IRF540 N
  • IRF540N
  • IRF540N PBF
  • IRF540N.
  • IRF540NPBF.
  • IRF540NPBF....
  • SP001561906