Descrizioni di Infineon IRF540NPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET, N Channel, 100 V, 33 A, 44 Milliohms, TO-220AB, 3 Pins, Through Hole
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF
Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd
N CHANNEL, MOSFET, 100V, 33A, TO-220AB;; N CHANNEL, MOSFET, 100V, 33A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Res; Available until stocks are exhausted
N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF540NPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.