onsemi FDP19N40
$ 1.271
Obsolete
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-11-24
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
VishaySIHP14N50D-GE3
MOSFET, N-CH, 500V, 14A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
Descrizioni
Descrizioni di onsemi FDP19N40 fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, 400V, 19A, 240mΩ, TO-220
N-Channel 400 V 240 mOhm Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 19A I(D), 400V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance240 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.115 nF
Max Operating Temperature150 °C
Max Power Dissipation215 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation215 W
Rds On Max240 mΩ
Resistance240 MΩ
Rise Time70 ns
Schedule B8541290080
Turn-Off Delay Time82 ns
Turn-On Delay Time31 ns
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità