onsemi FDP150N10
$ 1.26
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Cronologia dell'inventario
Tendenza a 3 mesi: +74.81%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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MOSFET N-CH 100V 58A TO220-3 N-Channel 100 V 58A (Tc) 94W (Tc) Through Hole PG-TO220-3
InfineonIPP16CN10NGXKSA1
MOSFET N-CH 100V 53A TO220-3 N-Channel 100 V 53A (Tc) 100W (Tc) Through Hole PG-TO220-3
Descrizioni
Descrizioni di onsemi FDP150N10 fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET 100V, 57A, 15mΩ
100 V, 57 A, 15 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 57A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
110W(Tc) 20V 4.5V@ 250µA 69nC@ 10 V 1individualNChannel 100V 15mΩ@ 49A,10V 57A 4.76nF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:228A
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +74.81%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)57 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time83 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.76 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max15 mΩ
Resistance15 MΩ
Rise Time164 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time86 ns
Turn-On Delay Time47 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità