onsemi FDP12N60NZ
$ 1.242
Obsolete
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Distributori autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDP12N60NZ | 1 | 544 | 9h | ||||||||
| Flip Electronics | FDP12N60NZ | 1 | >1wk | |||||||||
| Farnell | FDP12N60NZ. | 0 | 1 | 7h | ||||||||
| Win Source | WS-FDP12N60NZ | 407 | 25 | 8h | ||||||||
| Worldway Electronics | FDP12N60NZ | 7447 | 7 | Tube | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-08
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Parti correlate
STMicroelectronicsSTP13NK60Z
N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
STMicroelectronicsSTP10NK60Z
N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
STMicroelectronicsSTP10NM60N
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package
onsemiFCP380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220
Descrizioni
Descrizioni di onsemi FDP12N60NZ fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220
Single N-Channel 600 V 0.65 Ohm 34 nC 240 W DMOS Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,600V,12A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:240W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.676 nF
Max Operating Temperature150 °C
Max Power Dissipation240 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation240 W
Rds On Max650 mΩ
Rise Time50 ns
Threshold Voltage3 V
Turn-Off Delay Time80 ns
Turn-On Delay Time25 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDP12N60NZ.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità