onsemi FDP12N50NZ
EOL
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDP12N50NZ.
Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-04-20
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
STMicroelectronicsSTP11NK50Z
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 500V 10A TO-220FP
STMicroelectronicsSTP11NM50N
N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220
STMicroelectronicsSTP13N65M2
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package
Descrizioni
Descrizioni di onsemi FDP12N50NZ fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM II, 500 V, 11.5 A, 520 mΩ, TO-220
UNIFET2 500V N-CHANNEL MOSFET, TO220 - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Rail
N-Channel 500 V 520 mO 30 nC Flange Mount PowerTrench® Mosfet - TO-220
Power Field-Effect Transistor, 11.5A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)11.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.235 nF
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation170 W
Rds On Max520 mΩ
Rise Time50 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time20 ns
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDP12N50NZ.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità