onsemi FCP9N60N

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220
$ 1.395
Obsolete
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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 1.395
$ 1.22
Stock
288,456
310,895
Authorized Distributors
2
6
Mount
Through Hole
-
Case/Package
TO-220
TO-220-3
Drain to Source Voltage (Vdss)
600 V
650 V
Continuous Drain Current (ID)
9 A
10 A
Threshold Voltage
2 V
-
Rds On Max
385 mΩ
-
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
83.3 W
83 W
Input Capacitance
1.24 nF
-

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Parti correlate

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N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220
STMicroelectronicsSTP13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
96W 20V 2.5V 22nC@ 10V 1N 650V 299m¦¸@ 10V 11A 1.1nF@ 100V TO-220-3 10mm*4.4mm*15.65mm
STMicroelectronicsSTP10NK60Z
N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
onsemiFCP380N60
N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 10.2A, 380mΩ, TO-220

Descrizioni

Descrizioni di onsemi FCP9N60N fornite dai suoi distributori.

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220AB Rail
N-CHANNEL SUPREMOS MOSFET Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 9A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:27A
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FCP9N60N.