onsemi FDP038AN06A0
$ 1.674
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Cronologia dell'inventario
Tendenza a 3 mesi: -6.26%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo onsemi FDP038AN06A0, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | Scarica |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-07-30
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF2805PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de
InfineonIRF1405ZPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Descrizioni
Descrizioni di onsemi FDP038AN06A0 fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ
N-Channel 60 V 3.8 mOhm PowerTrench Mosfet TO-220AB
310W 20V 4V 124nC 1N 60V 3.5m¦¸ 17A,80A 6.4nF@ 25V TO-220-3 10.67mm*4.7mm*16.3mm
60 V, 80 A, 3.8 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:310W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -6.26%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)17 A
Current Rating80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.4 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation310 W
Rds On Max3.8 mΩ
Resistance3.8 MΩ
Rise Time144 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)60 V
Dimensions
Height9.65 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità