onsemi FDN359AN
$ 0.198
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Cronologia dell'inventario
Tendenza a 3 mesi: +150%
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Questo componente
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Price @ 1000
$ 0.198
$ 0.195
Stock
2,262,508
1,336,723
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
TO-236-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
2.7 A
2.7 A
Threshold Voltage
1.6 V
-
Rds On Max
46 mΩ
46 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
460 mW
500 mW
Input Capacitance
480 pF
650 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23
Diodes Inc.DMN3404L-7
N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Descrizioni
Descrizioni di onsemi FDN359AN fornite dai suoi distributori.
N-Channel PowerTrench™ MOSFET, Logic Level, 30V, 2.7A, 46mΩ
ON SEMICONDUCTOR - FDN359AN - Power MOSFET, N Channel, 30 V, 2.7 A, 0.046 ohm, SuperSOT, Surface Mount
Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R
Avnet Japan
30V N-Fet 46 Mo Ssot3 Rohs Compliant: Yes
onsemi NMOS PowerTrench, Vds=30 V, 2.7 A, SOT-23, , 3
N CHANNEL MOSFET, 30V, 2.7A, SUPER SOT
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 2.7A SUPERSOT3
SMALL SIGNAL FIELD-EFFECT TRANSI
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +150%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)2.7 A
Current Rating2.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance46 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance480 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation460 mW
Rds On Max46 mΩ
Resistance46 mΩ
Rise Time13 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1.6 V
Turn-Off Delay Time15 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)30 V
Dimensions
Height1.12 mm
Length2.92 mm
Width3.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità