onsemi FDMS8670S

N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
$ 0.847
Obsolete
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Schede tecniche e documenti

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onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-30
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-12
LTD Date2021-08-12
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Descrizioni

Descrizioni di onsemi FDMS8670S fornite dai suoi distributori.

N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
2.5W(Ta),78W(Tc) 20V 3V@1mA 73nC@ 10 V 1N 30V 3.5m¦¸@ 20A,10V 20A,42A 4nF@15V QFN 6mm*5mm*1.1mm
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipat
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

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  • ON Semiconductor / Fairchild
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  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
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  • ON SEMICONDUCT
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  • ON Semiconductor Inc.
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  • On Semiconductor Ltd