onsemi FDMS86101A

MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity: N Channel; Continuous Drain Curre
$ 1.738
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Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-04-25
Lifecycle StatusProduction (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)

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Descrizioni

Descrizioni di onsemi FDMS86101A fornite dai suoi distributori.

MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curre
N-Channel PowerTrench® MOSFET 100V, 60A, 8mΩ
Power Field-Effect Transistor, 13A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
2.5W(Ta),104W(Tc) 20V 4V@ 250µA 58nC@ 10 V 1individualNChannel 100V 8mΩ@ 13A,10V 13A,60A 4.12nF@50V PQFN SMD mount 1.1mm(height)
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

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