onsemi FDMS8320LDC
$ 1.437
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Cronologia dell'inventario
Tendenza a 3 mesi: -5.57%
Modelli CAD
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Modelli CAD
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-30
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 weeks ago)
Parti correlate
InfineonIPD50N04S408ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 7.9 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount
InfineonIPD50N04S4L08ATMA1
Power MOSFET, N Channel, 40 V, 50 A, 0.0062 ohm, TO-252 (DPAK), Surface Mount
Descrizioni
Descrizioni di onsemi FDMS8320LDC fornite dai suoi distributori.
N-Channel Power Trench® MOSFET, Dual CoolTM 56, 40V, 192A, 1.1mΩ
FDMS8320LDC Series 40 V 192 A 1.1 mOhm N-Ch PowerTrench® MOSFET - Dual CoolTM 56
Power Field-Effect Transistor, 44A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -5.57%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)44 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.635 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.2 W
Rds On Max1.1 mΩ
Rise Time15 ns
Turn-Off Delay Time69 ns
Turn-On Delay Time19 ns
Dimensions
Height950 µm
Length5.1 mm
Width5.85 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità